1μm600V HVIC
Overview
公司提供的1μm 600V HVIC高壓浮柵工藝， 擁有200V/600V兩個(gè)檔位的NLDMOS/高壓隔離島。公司的高壓互聯(lián)自屏蔽技術(shù)榮獲兩項(xiàng)發(fā)明專利。為電機(jī)驅(qū)動(dòng)、白色家電（IPM模塊）、大功率LLC、無人機(jī)等應(yīng)用提供了很好的解決方案。
Key Features
- Cost effective mask layer，competitive Rdson and BVdss performance
- Foundry compatible 5V CMOS，20V MV-LDMOS, 200V/600V HVMOS+island
- Rich options included parasitic Zener/JFET
- PDK and industry standard CAD tools are supported
- Supporting Thick metal layer
Application
-Motor driver
-IPM
-LLC
-Unmanned aerial vehicle
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1.0μm 60V/120V HVIC
Overview
公司提供的1.0μm 60V/120V HVIC工藝， 擁有高可靠性的LDMOS以及精簡(jiǎn)的光刻層次，提供60V/120V兩個(gè)檔位的N/PLDMOS以及隔離島。為手持電動(dòng)工具、平衡車、無人機(jī)等應(yīng)用提供了很好的解決方案。
Key Features
- Cost effective mask layer，competitive Rdson and BVdss performance
- Foundry compatible 5V CMOS，12V MV-LDMOS, 60V/120V HV-LDMOS and island.
- Rich options included parasitic Zener/JFET
- PDK and industry standard CAD tools are supported
- Supporting Thick metal layer
Application
- Power tools
- Ninebot
-Unmanned aerial vehicle
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1.0μm 25V 40V HV
Overview
1.0μm 25V 40V HV是公司的標(biāo)準(zhǔn)高壓工藝平臺(tái)之一。是以較少光刻層數(shù)實(shí)現(xiàn)的經(jīng)濟(jì)高壓工藝，工藝特征為1.0μm 線寬，單層多晶，雙層金屬，應(yīng)用于數(shù)?；旌系母邏寒a(chǎn)品，工藝平臺(tái)提供常規(guī)及隔離的5V低壓CMOS、25V或40V高壓CMOS器件，以及多晶高阻和齊納二極管等器件。
為了節(jié)省芯片面積，工藝提供1.0μm 前端0.5μm后端設(shè)計(jì)規(guī)則。
Key Features
- 5V logic layout & performance compatible with the industry standard
- 1.0 micron front-end, 1.0 micron or 0.5 micron back-end design rule
- Epi process for isolated devices
- Modular concept (HR/ Zener / BJT / Special require)
- Vgs/Vds=5V/25 or Vgs/Vds=5V/40V，Vgs/Vds=25V/25 or Vgs/Vds=40V/40V HVCMOS
- High value poly resistor
- I/O cell library with 2KV HBM ESD protection levels
Application
- LCD driver/LED driver
- Power management product
- Battery protection IC
