0.8μm 700V BCD G3S
Overview
0.8μm 700V BCD G3S是公司的標準高壓工藝平臺之一，是以較經(jīng)濟的光刻層數(shù)實現(xiàn)700V高壓工藝，特別合適離線式電源（AC/DC）和LED 驅(qū)動產(chǎn)品設(shè)計，特征為0.8μm前端/0.5μm后端，單層多晶，雙層金屬，工藝平臺提供常規(guī)及隔離的5V低壓CMOS、40V中壓CMOS器件、700V LDMOS、700V HV 耗盡管、700V JFET器件，以及多晶高阻和齊納二極管等器件。
Key Features
- 0.8 micron front-end, 0.5 micron back-end design rule
- Modular concept (HR/ Zener / BJT / 700V JFET/ Special require)
- 500V LDMOS (BVds>550V)/ 650V LDMOS (BVds>700V)/700V LDMOS (BVds>750V)
- JFET Voff: -9V/-25V
- High value poly resistor; 1K or 3K
Applications
- Off-line power (AC/DC)
- LED driver
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0.8μm 40V HV Power Analog
Overview
0.8μm HV P/A是公司的新一代高壓工藝平臺，是以最少光刻層數(shù)實現(xiàn)的經(jīng)濟高壓工藝，工藝特征為0.8μm FEOL/0.35umBEOL 線寬，雙層多晶，四層金屬，應(yīng)用于數(shù)?；旌系母邏寒a(chǎn)品。工藝平臺提供常規(guī)及隔離的5V低壓CMOS、25V中壓和40V高壓CMOS器件，以及多晶高阻和齊納二極管等器件。
Key Features
- 5V logic layout & performance compatible with the industry standard
- 0.8 micron front-end, 0.35 micron back-end design rule
- Epi process for isolated devices
- Modular concept (HR/ Zener / BJT / Special require)
- Vgs/Vds=5V/25 or Vgs/Vds=5V/40V，Vgs/Vds=25V/25 or Vgs/Vds=40V/40V HVCMOS
- High value poly resistor
- I/O cell library with 2KV HBM ESD protection levels
Applications
- LCD driver/LED driver
- Power management product
- Battery protection IC
